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Facet roughness analysis for InGaN/GaN lasers with cleaved facets

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Facet roughness analysis for InGaN/GaN lasers with cleaved facets

Auteurs : RBID : Pascal:98-0421168

Descripteurs français

Pascal (Inist)
- 4255P, 4260D, 6835B, 4286, 6855J, Etude expérimentale, Semiconducteur III-V, Laser semiconducteur, Indium composé, Gallium composé, Laser guide onde, Résonateur cavité laser, Microscopie force atomique, Face cristalline, Topographie surface, Fabrication optique, Couche épitaxique semiconductrice.

English descriptors

KwdEn :
- Atomic force microscopy, Crystal faces, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Laser cavity resonators, Optical fabrication, Semiconductor epitaxial layers, Semiconductor lasers, Surface topography, Waveguide lasers.

Abstract

Atomic force microscope images reveal a root-mean-square roughness Δd=16 nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e^{-16π2(nΔd/λ0)2}, where n is the refractive index of the semiconductor and λ₀ is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV. © 1998 American Institute of Physics.

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Le document en format XML

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<front><div type="abstract" xml:lang="en">Atomic force microscope images reveal a root-mean-square roughness Δd=16 nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e<sup>-16π2(nΔd/λ0)2</sup>
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, where n is the refractive index of the semiconductor and λ<sub>0</sub>
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Facet roughness analysis for InGaN/GaN lasers with cleaved facets

Facet roughness analysis for InGaN/GaN lasers with cleaved facets

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri